vishay siliconix dg9636 document number: 65159 s10-2012-rev. b, 06-sep-10 www.vishay.com 1 dual spdt analog switch features ? leakage current < 0.5 na max. at 85 c ? low switch capacitance (c soff , 2 pf typ.) ?r ds(on) - 83 max. ? fully specified with si ngle supply operation at 12 v ? low voltage, 1.65 v cmos/ttl compatible ? 720 mhz, - 3 db bandwidth ? excellent isolation and crosstalk performance (typ. > - 60 db at 10 mhz) ? fully specified from - 40 c to 85 c and - 40 c to + 125 c ? latch-up current 300 ma per jesd78 ? lead (pb)-free low profile miniqfn-10 (1.4 mm x 1.8 mm x 0.55 mm) ? compliant to rohs directive 2002/95/ec applications ? high-end data acquisition ? medical instruments ? precision instruments ? high speed communications applications ? automated test equipment ? sample and hold applications description the dg9636 is a cmos, dual spdt analog switch designed to operate from + 2.7 v to + 12 v, single supply. all control logic inputs have a guaranteed 1.65 v logic high threshold when operation from a + 12 v power supply. this makes the dg9636 ideally suited to interface directly with low voltage micro-processor control signals. processed with high density cmos technology, the dg9636 has a 83 channel on resistance while providing ultra low parasitic capacitance of 2 pf for cs (off) and 7 pf for cd (on) . other performance features are: 720 mhz - 3 db bandwidth, - 67 db cross talk and - 58 db off isolation at 10 mhz frequency. key applications for the dg9636 are logic level translation, pulse generator, and high speed or low noise signal switching in precision instrumentations and portable device designs. the dg9636 is available in space saving 1.4 mm x 1.8 mm miniqfn10 package. as a committed partner to the community and the environment, vishay siliconix manufactures this product with lead (pb)-free device termination. the miniqfn-10 package has a nickel-palladium-gold device termination and is represented by the lead (pb)-f ree "-e4" suffix to the ordering part number. the nickel-palladium-gold device terminations meet all jedec standards for reflow and msl rating. functional block diagram and pin configuration truth table selected input on switches a1 a0 dg9636 x 0 d1 to s1a x 1 d1 to s1b 0 x d2 to s2a 1 x d2 to s2b de v ice marking: yx for dg9636 x = date/lot tracea b ility code 1 2 3 4 5 6 7 8 9 10 a1 a0 v + s1a g n d s1b d1 d2 s2b s2a top v ie w dg9636 miniqfn - 10l pin 1: lo n g lead yx pin 1 logic rohs compliant
www.vishay.com 2 document number: 65159 s10-2012-rev. b, 06-sep-10 vishay siliconix dg9636 notes: ? - 40 c to 85 c datasheet limits apply. notes: a. signals on sx, dx, or ax exceeding v+ or v- will be clamped by internal diodes. li mit forward diode current to maximum curren t ratings. b. all leads welded or soldered to pc board. c. derate 2.6 mw/c above 70 c. d. manual soldering with iron is not recommended for leadless co mponents. the miniqfn-10 is a leadless package. the end of the l ead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. a solder fillet at the exposed copper l ip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. ordering information temp. range package part number - 40 c to 125 c 10 pin miniqfn DG9636EN-T1-E4 - 40 c to 85 c 10 pin miniqfn dg9636dn-t1-e4 absolute maximum ratings (t a = 25 c, unless otherwise noted) parameter limit unit v+ to gnd 14 v digital inputs a , v s , v d (v+) + 0.3 or 30 ma, whichever occurs first continuous current (any terminal) 30 ma peak current, s or d (pulsed 1 ms, 10 % duty cycle) 100 storage temperature - 65 to 150 c power dissipation (package) b 10 pin miniqfn c, d 208 mw thermal resistance (package) b 10 pin miniqfn 357 c/w specifications for dual supplies parameter symbol test conditions unless otherwise specified v+ = 12 v, v a0, a1 = 1.65 v, 0.5 v a temp. b typ. c - 40 c to 125 c - 40 c to 85 c unit min. d max. d min. d max. d analog switch analog signal range e v analog full 12 12 v on-resistance r ds(on) i s = 1 ma, v d = + 11.3 v room full 83 110 140 110 125 on-resistance match r on i s = 1 ma, v d = + 11.3 v room full 24 9 4 6 on-resistance flatness r flatness i s = 1 ma, v d = 0.7 v, 6.5 v, 11.3 v room full 33 45 55 45 50 switch off leakage current i s(off) v+ = 12 v, v d = 1 v/11 v, v s = 11 v/1 v room full 0.01 - 1 - 18 1 18 - 1 - 2 1 2 na i d(off) room full 0.01 - 1 - 18 1 18 - 1 - 2 1 2 channel on leakage current i d(on) v+ = 12 v, v d = v s 11 v/1 v room full 0.01 - 1 - 18 1 18 - 1 - 2 1 2 digital control input current, v in low i il v ax = 0.5 v full 0.005 - 0.1 0.1 - 0.1 0.1 a input current, v in high i ih v ax = 1.65 v full 0.005 - 0.1 0.1 - 0.1 0.1 input capacitance e c in f = 1 mhz room 3 pf dynamic characteristics tu r n - o n t i m e t on r l = 300 , c l = 35 pf see figure 1, 2 room full 30 70 90 70 80 ns turn-off time t off room full 15 55 75 55 65 break-before-make t bbm room full 15 5 2 5 2 charge injection e q inj v g = 0 v, r g = 0 , c l = 1 nf room 23.5 pc off isolation e oirr r l = 50 , c l = 5 pf, f = 10 mhz room - 58 db bandwidth e bw r l = 50 room 720 mhz channel-to-channel crosstalk e x ta l k r l = 50 , c l = 5 pf, f = 10 mhz room - 67 db
document number: 65159 s10-2012-rev. b, 06-sep-10 www.vishay.com 3 vishay siliconix dg9636 dynamic characteristics source off capacitance e c s(off) f = 1 mhz room 2 pf channel on capacitance e c d(on) room 7.7 total harmonic distortion e thd signal = 1 v rms , 20 hz to 20 khz, r l = 600 room 0.01 % power supplies power supply current i+ v in = 0 v, or v+ room full 0.001 0.5 1 0.5 1 a ground current i gnd room full - 0.001 - 0.5 - 1 - 0.5 - 1 specifications for dual supplies parameter symbol test conditions unless otherwise specified v+ = 12 v, v a0, a1 = 1.65 v, 0.5 v a temp. b typ. c - 40 c to 125 c - 40 c to 85 c unit min. d max. d min. d max. d specifications for single supply parameter symbol test conditions unless otherwise specified v+ = 5 v, v a0, a1 = 1.4 v, 0.5 v a temp. b typ. c - 40 c to 125 c - 40 c to 85 c unit min. d max. d min. d max. d analog switch analog signal range e v analog full 5 5 v on-resistance r ds(on) i s = 1 ma, v d = + 3.5 v room full 120 170 250 170 200 on-resistance match r on i s = 1 ma, v d = + 3.5 v room full 35 12 5 10 switch off leakage current i s(off) v+ = 5.5 v, v d = 1 v/4.5 v, v s = 4.5 v/1 v room full 0.01 - 1 - 18 1 18 - 1 - 2 1 2 na i d(off) room full 0.01 - 1 - 18 1 18 - 1 - 2 1 2 channel on leakage current i d(on) v+ = 5.5 v, v s = v d = 1 v/4.5 v room full 0.01 - 1 - 18 1 18 - 1 - 2 1 2 digital control input current, v in low i l v ax = 0.5 v full 0.005 - 0.1 0.1 - 0.1 0.1 a input current, v in high i h v ax = 1.4 v full 0.005 - 0.1 0.1 - 0.1 0.1 input capacitance c in f = 1 mhz room 3 pf dynamic characteristics tu r n - o n t i m e t on r l = 300 , c l = 35 pf see figure 1, 2 room full 55 ns turn-off time t off room full 30 break-before-make-time t bmm room full 36 charge injection e q inj c l = 1 nf, r gen = 0 , v gen = 0 v full 10 pc off-isolation e oirr f = 10 mhz, r l = 50 , c l = 5 pf room - 58 db crosstalk e x ta l k room - 68 bandwidth e bw r l = 50 room 610 mhz total harmonic distortion e thd signal = 1 v rms, 20 hz to 20 khz, r l = 600 room 2.2 % source off capacitance e c s(off) f = 1 mhz room 2.1 pf channel on capacitance e c d(on) 8.1 power supplies power supply current i+ v in = 0 v, or v+ room full 0.001 0.5 1 0.5 1 a ground current i gnd room full - 0.001 - 0.5 - 1 - 0.5 - 1
www.vishay.com 4 document number: 65159 s10-2012-rev. b, 06-sep-10 vishay siliconix dg9636 notes: a. v in = input voltage to perform proper function. b. room = 25 oc, full = as determined by the operating temperature. c. typical value are for design aid only, not guaranteed nor subject to production testing. d. the algebraic convention whereby the most negative value is a minimum and the most posit ive a maximum, is used in this datash eet. e. guaranteed by design, not su bject to production test. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications for single supply parameter symbol test conditions unless otherwise specified v+ = 3 v, v a0, a1 = 1.4 v, 0.5 v a temp. b typ. c - 40 c to + 125 c - 40 c to + 85 c unit min. d max. d min. d max. d analog switch analog signal range e v analog full 3 3 v on-resistance r ds(on) i s = 1 ma, v d = + 1.5 v room full 200 245 325 245 290 on-resistance match r on i s = 1 ma, v d = + 1.5 v room full 56 13 6 11 switch off leakage current (for 16 pin miniqfn) i s(off) v+ = 3.3 v, v- = 0 v v d = 1 v/3 v, v s = 3 v/1 v room full 0.01 - 1 - 18 1 18 - 1 - 2 1 2 na i d(off) room full 0.01 - 1 - 18 1 18 - 1 - 2 1 2 channel on leakage current (for 16 pin miniqfn) i d(on) v+ = 3.3 v, v- = 0 v, v s = v d = 1 v/3 v room full 0.01 - 1 - 18 1 18 - 1 - 2 1 2 digital control input current, v in low i l v ax = 0.5 v full 0.005 - 0.1 0.1 - 0.1 0.1 a input current, v in high i h v ax = 1.4 v full 0.005 - 0.1 0.1 - 0.1 0.1 input capacitance c in f = 1 mhz room 3.1 pf dynamic characteristics enable turn-on time t on r l = 300 , c l = 35 pf see figure 1, 2 room full 96 ns enable turn-off time t off room full 60 break-before-make- time t bmm room full 77 charge injection e q inj c l = 1 nf, r gen = 0 , v gen = 0 v full 6.6 pc off-isolation e oirr f = 10 mhz, r l = 50 , c l = 5 pf room - 57 db crosstalk e x ta l k room - 69 bandwidth e bw r l = 50 room 525 mhz total harmonic distortion e thd signal = 1 v rms, 20 hz to 20 khz, r l = 600 room 2.2 % source off capacitance e c s(off) f = 1 mhz room 2.1 pf channel on capacitance e c d(on) 8.3 power supplies power supply current i+ v in = 0 v, or v+ room full 0.001 0.5 1 0.5 1 a ground current i gnd room full - 0.001 - 0.5 - 1 - 0.5 - 1
document number: 65159 s10-2012-rev. b, 06-sep-10 www.vishay.com 5 vishay siliconix dg9636 typical characteristics (25 c, unless otherwise noted) on-resistance vs. single supply voltage on-resistance vs. analog voltage and temperature supply current vs. input switching frequency v d - analog voltage (v) r on - on-resistance ( ? ) 0 50 100 150 200 250 300 350 02468101214 v cc = 2.7 v v cc = 3.0 v v cc = 5.0 v v cc = 13.2 v v cc = 10.8 v v cc = 12.0 v t = 25 c i s = 1 ma v d - analog voltage (v) r on - on-resistance ( ? ) 0 50 100 150 200 250 300 350 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 v+ = 5.0 v i s = 1 ma - 40 c + 125 c + 85 c + 25 c input switching frequency (hz) supply current (a) v+ = +12.0 v 10 10m 100k 10k 1k 100 1m 1 pa 10 pa 100 pa 1 na 100 na 1 a 10 a 100 a i + i gnd on-resistance vs. analog voltage and temperature on-resistance vs. analog voltage and temperature leakage current vs. temperature v d - analog voltage (v) r on - on-resistance ( ? ) 0 50 100 150 200 250 300 350 400 450 500 0 0.5 1 1.5 2 2.5 3 v+ = 3.0 v i s = 1 ma - 40 c + 125 c + 85 c + 25 c v d - analog voltage (v) r on - on-resistance ( ? ) 0 25 50 75 100 125 150 0 1 2 3 4 5 6 7 8 9 10 11 12 v+ = 12.0 v i s = 1ma - 40 c + 125 c + 85 c + 25 c temperature (c) leakage current (pa) 1 10 100 1000 10 000 - 60 - 40 - 20 0 20 40 60 80 100 120 140 i d(off) i d(on) i s(off) v+ = 13.2 v
www.vishay.com 6 document number: 65159 s10-2012-rev. b, 06-sep-10 vishay siliconix dg9636 typical characteristics (25 c, unless otherwise noted) insertion loss, off-isolation, crosstalk vs. frequency frequency (hz) l oss , o irr , x talk (db) - 100 - 90 - 80 - 70 - 60 - 50 - 40 - 30 - 20 - 10 0 v+ = 12.0 v r l = 50 ? loss oirr x talk 100k 1m 10m 100m 1g charge injection vs. analog voltage v s - analog voltage (v) q - charge injection (pc) - 25 - 20 - 15 - 10 - 5 0 5 10 15 20 25 0123456789101112 t = 25 c c l = 1 nf v+ = 12.0 v v+ = 5.0 v v+ = 3.0 v switching threshold vs. supply voltage v+ - supply voltage (v) v th - switching threshold (v) 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 14 15 v ih v il
vishay siliconix dg9636 document number: 65159 s10-2012-rev. b, 06-sep-10 www.vishay.com 7 test circuits figure 1. enable switching time 0 v v cc 50 % 50 % 90 % t o n s1a or s2a o n v o v ax v s1a or v s2a 0 v t r < 5 ns t f < 5 ns t off 90 % a0 or a1 g n d v + v + v o 50 300 35 pf d1 or d2 s1a or s2a s1b or s2b v + figure 2. break-before-make a0 a1 g n d v + v o 50 300 35 pf d1 or d2 sxa - sxb 0 v v cc 50 % 8 0 % t d v o v a0,a1 v sxa or v sxb v + v + 0 v t r < 5 ns t f < 5 ns figure 3. charge injection a0 or a1 g n d v + v + v o c l 1 nf d1 or d2 sxa or sxb 0 v v cc v o v ax r g v g o n off charge injection = v x c o l off v o t r < 5 ns t f < 5 ns
www.vishay.com 8 document number: 65159 s10-2012-rev. b, 06-sep-10 vishay siliconix dg9636 test circuits vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65159 . figure 4. insertion loss figure 6. crosstalk a0 or a1 g n d v + v + v out d1 or d2 s1a or s2a v g r g = 50 50 v i n n et w ork analyzer insertion loss = 20 log v out v i n v + a0 or a1 g n d v + v + v out d1 or d2 s1a or s2a v g r g = 50 50 v i n n et w ork analyzer cross talk = 20 log v out v i n 50 s1b or s2b v + figure 5. off-isolation figure 7. source/drain capacitance a0 a1 g n d v + v + v out d1 or d2 sxa or sxb v g r g = 50 50 v i n n et w ork analyzer off isolation = 20 log v out v i n a0 or a1 g n d v + v - v + d1 or d2 s1a or s2a | to | s2a or s2b impedance analyzer v - v +
vishay siliconix package information document number: 74496 12-feb-07 www.vishay.com 1 mini qfn-10l case outline dim millimeters inches min. nam. max. min. nam. max. a 0.50 0.55 0.60 0.0197 0.0217 0.0236 a1 0.00 - 0.05 0.000 - 0.002 b 0.15 0.20 0.25 0.006 0.008 0.010 c 0.15 ref 0.006 ref d 1.75 1.80 1.85 0.069 0.071 0.073 e 1.35 1.40 1.45 0.053 0.055 0.057 e 0.40 bsc 0.016 bsc l 0.35 0.40 0.45 0.014 0.016 0.018 l1 0.45 0.50 0.55 0.0177 0.0197 0.0217 ecn t-07039-rev. a, 12-feb-07 dwg: 5957
document number: 91 000 www.vishay.com revision: 11-mar-11 1 disclaimer legal disclaimer notice vishay all product, product specifications and data ar e subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicab le law, vishay disc laims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of pro ducts for certain types of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in gene ric applications. such statements are not binding statements about the suitability of products for a partic ular application. it is the customers responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product co uld result in person al injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding the design or manufact ure of the part. please contact authorized vishay personnel t o obtain written terms and conditions regarding products designed fo r such applications. no license, express or implied, by estoppel or otherwise, to any intelle ctual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.
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